2N3906 Spec Sheet

2N3906 Spec Sheet - Web product specification transistor 2n3906 features pinning low current (max. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. 200 ma) low voltage (max. Microdot may be in either location). Web pnp general purpose amplifier. Silicon epitaxial planar npn transistor. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note:

Silicon epitaxial planar npn transistor. Microdot may be in either location). Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web product specification transistor 2n3906 features pinning low current (max. Web pnp general purpose amplifier. 200 ma) low voltage (max.

Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: 200 ma) low voltage (max. Web pnp general purpose amplifier. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Microdot may be in either location). Silicon epitaxial planar npn transistor. Web product specification transistor 2n3906 features pinning low current (max.

2N3906 datasheet(3/3 Pages) UTC GENERAL PURPOSE APPLIATION

Web pnp general purpose amplifier. Silicon epitaxial planar npn transistor. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Microdot may be in either location). This device is designed for general purpose amplifier and switching applications at.

2N3906 Datasheet PNP TRANSISTOR 60V, 200mA ST

Web pnp general purpose amplifier. Silicon epitaxial planar npn transistor. 200 ma) low voltage (max. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Microdot may be in either location).

2n3906 EcuRed

Semiconductor 2N3906 (2N 3906) TRANSISTOR SILICON PNP / 40V / 0.2A/B

Web pnp general purpose amplifier. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Microdot may be in either location). 200 ma) low voltage (max. This device is designed for general purpose amplifier and switching applications at.

Datasheet 2N3904

This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. 200 ma) low voltage (max. Web pnp general purpose amplifier. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free.

DC Components 2N3906 40V TO92 PNP Audio Transistor Rapid Online

Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Silicon epitaxial planar npn transistor. 200 ma) low voltage (max. Microdot may be in either location). This device is designed for general purpose amplifier and switching applications at.

datasheet 2n3906 Transistor Electrical Engineering

Microdot may be in either location). Web product specification transistor 2n3906 features pinning low current (max. Silicon epitaxial planar npn transistor. Web pnp general purpose amplifier. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma.

2n3906 Datasheet PDF Transistor Bipolar Junction Transistor

Silicon epitaxial planar npn transistor. Web pnp general purpose amplifier. Microdot may be in either location). Web product specification transistor 2n3906 features pinning low current (max. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note:

2N3906 pdf, 2N3906 데이터시트, 2N3906 데이타시트

This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: 200 ma) low voltage (max. Microdot may be.

3332_3335_Spec Sheet_Jan74 3332 3335 Spec Sheet Jan74

200 ma) low voltage (max. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web pnp general purpose amplifier. Microdot may be in either location). Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year.

This Device Is Designed For General Purpose Amplifier And Switching Applications At Collector Currents Of 10 Ma To 100 Ma.

Microdot may be in either location). Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: 200 ma) low voltage (max. Silicon epitaxial planar npn transistor.